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Collectorbase breakdown voltage vbrcbo 60 80 v ic100a collectoremitter breakdown voltage vbrceo 45 60 v ic10ma emitterbase. Operating and storage junction temperature range tj, tstg. Max unit vcesat collectoremitter saturation voltage ic0. Elektronische bauelemente npn plastic encapsulated. C2655 y br c2655 2sc2655 c2655 y 06 c2655 br 2sc2655 y c2655 y 40 c2655 y 05 2sa1020 text. Pure storage flasharrayx, the worlds first 100% allflash endtoend nvme and nvmeof array, now optionally includes a storage class memory boost to address the most demanding enterprise applications performance requirements. Max unit collector cutoff current i cbo vcb 240 v, ie 0. C npn transistor c transistor c c y br c c characteristics c y 06 c transistor 2sc silicon 2sc26555 epitaxial type toshiba marking code transistor 2sc npn is one of the two types of bipolar transistors, consisting of a layer of pdoped semiconductor the base between two. A, ie 0a collector to emitter breakdown voltage vbrceo30 v ic 1ma, ib 0a. The complementary pnp transistor to the 2sc2655 is the 2sa1020. Ztx650 ztx651 typical characteristics vcesat v ic ic collector current amps v ce a t v olts i c l co le c to r cur r e n t am ps vce collector voltage volts safe operating area 1 10 100 0.
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Pdf 2sc2655 2sa1020 o92mod c2655 c2655 y br c2655 2sc2655 c2655 y 06 c2655 br 2sc2655 y c2655 y 40. Marking i b1 20 s 30 v i b2 output 30 ib2 ib1 input c lot no. C2655 datasheet, c2655 datasheets, c2655 pdf, c2655 circuit. A wide variety of transistors c2655 options are available to you, there are 273 suppliers who sells transistors c2655 on, mainly located in asia. C2655 datasheet pdf 50v, npn power amplifier to92l, datasheet, c2655 pdf, c2655 pinout, c2655 equivalent, data, c2655 circuit, output, c2655 schematic. Any changes of specification will not be informed individually.
In between collector and base low fluctuation in breakdown voltages high energy handling capability high speed switching absolute maximum ratings. October 2007 rev 3 18 8 2sd882 npn medium power transistor features high current low saturation voltage complement to 2sb772 applications voltage regulation relay driver generic switch audio power amplifier dcdc converter description the device is a npn transistor manufactured by. Collectoremitter saturation voltage baseemitter saturation voltage 1 switching time. Unit test conditions collector to base breakdown voltage vbrcbo 50 v ic100. Unit test conditions collector to base breakdown voltage vbrcbo35 v ic 100.
Junction, storage temperature tj, tstg 150, 55150 c electrical characteristics ta 25c unless otherwise specified parameter symbol min. Toshiba transistor silicon npn tr iple diffused type pct. C2655 datasheet pdf 50v, npn power amplifier to92l. Utc power amplifier applications power switching applications,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Offer c2655 y hit from kynix semiconductor hong kong limited.
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Toshiba transistor silicon npn epitaxial type pct process. Case r jc 50 cw stresses exceeding maximum ratings may damage the device. Storage temperature range tstg 55125 c electrical characteristics ta 25c characteristics symbol test condition min typ. Fairchild and our authorized distributors will stand behind all warranties and will appropriately addr ess any warranty issues that may arise.